Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method with Subpicosecond Pulsed Laser
نویسنده
چکیده
Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using the transient grating (TG) method with sub-picosecond pulsed laser at room temperature. The diffusion coefficients (D) of photo-created carriers were estimated by the decay rate time of TG signals and the photoluminescence (PL) lifetime. It was found that D depends on the emission wavelength (In composition). The relationship between the emission efficiencies and carrier diffusion was considered in terms of the spatial inhomogeneity of In composition.
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